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EDO$500066$ - translation to spanish
ES UN ESTADO EN EL PAÍS AFRICANO DE NIGERIA
Edo (Estado); Estado Edo; Estado de Edo
EDO
Output de datos extendidos, tipo de memoria ocasional que permite la recolección de datos sucesivamente sin interrupción
Fast Page Mode
![[[MoSys]] MDRAM MD908](https://commons.wikimedia.org/wiki/Special:FilePath/MoSys MD908.png?width=200 "[[MoSys]] MDRAM MD908")
![1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]](https://commons.wikimedia.org/wiki/Special:FilePath/Olivetti JP90 - Toshiba TC518129CFWL-80 on controller-8514.jpg?width=200 "1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]")
![NMOS]] DRAM cell. It was patented in 1968.](https://commons.wikimedia.org/wiki/Special:FilePath/Original 1T1C DRAM design.svg?width=200 "NMOS]] DRAM cell. It was patented in 1968.")
![die]] of a Samsung DDR-SDRAM 64MBit package](https://commons.wikimedia.org/wiki/Special:FilePath/SAMSUNG@DDR-SDRAM@64MBit@K4D62323HA-QC60 Stack-DSC03539-DSC03556 - ZS-DMap.jpg?width=200 "die]] of a Samsung DDR-SDRAM 64MBit package")
![A 512 MBit [[Qimonda]] GDDR3 SDRAM package](https://commons.wikimedia.org/wiki/Special:FilePath/Sapphire Ultimate HD 4670 512MB - Qimonda HYB18H512321BF-10-93577.jpg?width=200 "A 512 MBit [[Qimonda]] GDDR3 SDRAM package")
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
Estado de página rápida, tipo de RAM dinámico que permite el acceso rápido a los datos en una linea presente y abierta
Dynamic RAM
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
See: DRAM
Definition
EDO
Extended Data Out [Additional explanations: ram] (Reference: RAM, DRAM, IC)
Wikipedia
Edo (estado)
Edo es un estado interior de Nigeria. Su capital es Ciudad de Benín. Fue formado en 1991 tras la división de Bendel en dos estados: Edo y Delta. Las lenguas nativas habladas en el estado incluyen el edo, el esan, el ora, etc.
